Ion beam assisted deposition (IBAD)  is a materials engineering technique which combines ion implantation with simultaneous sputtering or another physical vapor deposition technique. Besides providing independent control of parameters such as ion energy, temperature and arrival rate of atomic species during deposition, this technique is especially useful to create a gradual transition between the substrate material and the deposited film, and for depositing films with less built-in strain than is possible by other techniques.

Using this technique, we are able to sputter followings materials (up to 6 multilayer): Al, Au, Co, Cu, Hf, Nb, NiCr, Ta, Ti and W .